Method of forming an interconnect structure having an air gap and structure thereof

ABSTRACT

A semiconductor device and method of manufacture are provided which utilize an air gap to help isolate conductive structures within a dielectric layer. A first etch stop layer is deposited over the conductive structures, and the first etch stop layer is patterned to expose corner portions of the conductive structures. A portion of the dielectric layer is removed to form an opening. A second etch stop layer is deposited to line the opening, wherein the second etch stop layer forms a stepped structure over the corner portions of the conductive structures. Dielectric material is then deposited into the opening such that an air gap is formed to isolate the conductive structures.

This application is a continuation of and claims priority to U.S. patentapplication Ser. No. 15/350,778, filed on Nov. 14, 2016, and entitled“Method of Forming an Interconnect Structure Having an Air Gap andStructure Thereof,” which is a divisional of and claims priority to U.S.patent application Ser. No. 14/621,221, filed on Feb. 12, 2015, andentitled “Method of Forming an Interconnect Structure Having an Air Gapand Structure Thereof,” now U.S. Pat. No. 9,496,169 issued on Nov. 15,2016, which applications are incorporated herein by reference.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometry size(i.e., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs. However, such scaling down has also increased thecapacitive coupling between adjacent elements. For example, in back-endof line (BEOL) interconnect structures, for any two adjacent conductivelines, when the distance between the conductive lines decreases, theresulting capacitance (a function of the dielectric constant (k value)of the insulating material divided by the distance between theconductive features) increases. This increase in capacitive couplingfurther results in increased parasitic capacitance, which negativelyimpacts the speed and overall performance of the IC device.

Improved methods of reducing capacitance between interconnect lines aredesired.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure are best understood from thefollowing detailed description when read with the accompanying figures.It is emphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale and are used forillustration purposes only. In fact, the dimensions of the variousfeatures may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flowchart of a method of fabricating a semiconductor devicehaving an interconnect structure, according to one or more embodimentsof the present disclosure.

FIGS. 2-11 are cross-sectional views of a portion of a semiconductordevice having an interconnect structure at various stages offabrication, according to one embodiment of the present disclosure.

FIGS. 12-13 are cross-sectional views of a portion of a semiconductordevice having an interconnect structure with overhangs at various stagesof fabrication, according to another embodiment of the presentdisclosure.

FIGS. 14-21 are cross-sectional views of a portion of a secondsemiconductor device having an interconnect structure at various stagesof fabrication, according another embodiment of the present disclosure.

DETAILED DESCRIPTION

In the following description, specific details are set forth to providea thorough understanding of embodiments of the present disclosure.However, one having ordinary skill in the art will recognize thatembodiments of the disclosure can be practiced without these specificdetails. In some instances, well-known structures and processes are notdescribed in detail to avoid unnecessarily obscuring embodiments of thepresent disclosure.

Reference throughout this specification to “one embodiment” or “anembodiment” means that a particular feature, structure, orcharacteristic described in connection with the embodiment is includedin at least one embodiment of the present disclosure. Thus, theappearances of the phrases “in one embodiment” or “in an embodiment” invarious places throughout this specification are not necessarily allreferring to the same embodiment. Furthermore, the particular features,structures, or characteristics may be combined in any suitable manner inone or more embodiments. It should be appreciated that the followingfigures are not drawn to scale; rather, these figures are intended forillustration.

FIG. 1 is a flowchart of a method 100 of fabricating a semiconductordevice having an interconnect structure, according to various aspects ofthe present disclosure. Referring to FIG. 1, the method 100 includesblock 102, in which a plurality of conductive features is formed in afirst dielectric layer overlying a semiconductor substrate. The method100 includes block 104, in which a first etch stop layer (ESL) isdeposited over the plurality of conductive features and the firstdielectric layer. The method 100 includes block 106, in which a portionof the first dielectric layer between any two adjacent conductivefeatures is removed to form a first opening there-between. The firstopening exposes an upper corner of each of the two adjacent conductivefeatures. The method 100 includes block 108, in which a portion of thefirst etch stop layer proximate the upper corner of each of the twoadjacent conductive features is removed. The method 100 includes block110, in which a second etch stop layer is deposited over a remainingportion of the first etch stop layer, the exposed upper corners of theconductive features, and in the first opening. The method 100 includesblock 112, in which a second dielectric layer is deposited in the firstopening. The deposition rate is tuned to be high enough such that thesecond dielectric layer closes up before completely filling the firstopening to form an air gap.

In some embodiments, additional processes are performed before, during,and/or after the blocks 102-112 shown in FIG. 1 to complete thefabrication of the semiconductor device, but these additional processesare not discussed herein in detail for the sake of brevity.

FIGS. 2-11 are cross-sectional views of a semiconductor device having aninterconnect structure at various fabrication stages according to one ormore embodiments of the present disclosure. FIGS. 2-11 have beensimplified for a better illustration of the concepts of the presentdisclosure. It should be appreciated that the materials, geometries,dimensions, structures, and process parameters described herein are onlyillustrative, and are not intended to be, and should not be construed tobe, limiting to the present disclosure. Many alternatives andmodifications will be apparent to those skilled in the art, onceinformed by the present disclosure.

Referring to FIG. 2, a semiconductor device 200 is provided. Thesemiconductor device 200 may be an integrated circuit (IC) chip, systemon chip (SoC), or portion thereof, that may include various passive andactive microelectronic devices such as resistors, capacitors, inductors,diodes, and/or transistors. The semiconductor device 200 includes asubstrate 202. The substrate 202 may be a portion of a semiconductorwafer. The substrate 202 may be formed of a semiconductor material suchas silicon, germanium, diamond, or the like. Alternatively, compoundmaterials such as silicon germanium, silicon carbide, gallium arsenic,indium arsenide, indium phosphide, silicon germanium carbide, galliumarsenic phosphide, gallium indium phosphide, combinations of these, andthe like, may also be used. Additionally, the substrate 202 may be asilicon-on-insulator (SOI) substrate. Generally, an SOI substratecomprises a layer of a semiconductor material such as epitaxial silicon,germanium, silicon germanium, SOI, silicon germanium on insulator(SGOI), or combinations thereof. The substrate may be doped with ap-type dopant, such as boron, aluminum, gallium, or the like, althoughthe substrate may alternatively be doped with an n-type dopant, as isknown in the art.

The substrate 202 may include active and passive devices (not shown). Asone of ordinary skill in the art will recognize, a wide variety ofdevices such as transistors, capacitors, resistors, inductors,combinations of these, and the like may be used to generate thestructural and functional requirements of the design for thesemiconductor device 200. Only a portion of the substrate 202 isillustrated in the figures, as this is sufficient to fully describe theillustrative embodiments.

A dielectric layer 204 is formed over the substrate 202. The dielectriclayer 204 may be a single layer or a multi-layered structure. Thedielectric layer 204 may be formed of oxides such as silicon oxide,borophosphosilicate glass (BPSG), undoped silicate glass (USG),fluorinated silicate glass (FSG), low-k dielectrics such as carbon dopedoxides, extremely low-k dielectrics such as porous carbon doped silicondioxide, a polymer such as polyimide, the like, or a combinationthereof. The low-k dielectric materials may have k values lower than3.9. The dielectric layer 204 may be deposited by chemical vapordeposition (CVD), physical vapor deposition (PVD), atomic layerdeposition (ALD), a spin-on-dielectric (SOD) process, the like, or acombination thereof. In an embodiment, the dielectric layer 204 isformed directly on a top surface of the substrate 202. In otherembodiments, the dielectric layer 204 is formed on intermediate layersand/or structures (not shown) which are on substrate 202. In someembodiments, the dielectric layer 204 is an inter-layer dielectric(ILD).

Still referring to FIG. 2, a plurality of openings 206 are formed indielectric layer 204, using, e.g., photolithographic masking and etchingtechniques, such as immersion photolithography, ion-beam writing, orother suitable processes. In some embodiments, a thin diffusion barrierlayer 208 may be deposited by known deposition methods such as chemicalvapor deposition (CVD) and formed in the openings 206 and on thedielectric layer 204. The diffusion barrier layer 208 functions toprevent metal atoms, such as copper atoms, from diffusing into thedielectric layer 204 when metal lines and/or metal vias are laterformed. In an embodiment, the diffusion barrier layer 208 includestantalum (Ta), tantalum nitride (TaNx), titanium (Ti), titanium nitride(TiNx), manganese oxide (MnOx), the like, and/or combinations thereof.In an embodiment, the diffusion barrier layer 208 has a thickness thatis less than about 150 Angstroms.

Turning now to FIG. 3, a metal layer 210 a is deposited over thesemiconductor device filling the openings 206 of the dielectric layer204. The metal layer 210 a may include copper (Cu), aluminum (Al),tungsten (W) or other suitable conductive material. In one embodiment,the metal layer 210 a includes copper or copper alloy, such as coppermagnesium (CuMn), copper aluminum (CuAl), or copper silicon (CuSi). Inone embodiment, the metal layer 210 a is formed by a plasma vapordeposition (PVD) process that fills openings 206 and forms a blanketcoating over a top surface of dielectric layer 204. The metal layer 210a may be formed to a thickness above the dielectric layer 204 of fromabout 500 Angstroms to about 2 μm, depending upon the desiredapplication and the technology node employed.

In another embodiment, the metal layer 210 a is formed by firstdepositing a seed layer by, e.g., physical vapor deposition techniques.The seed layer could be formed to a thickness of about 20 A to about 100A, although other thicknesses could be employed depending upon theapplication and the desired process. Then a copper alloy material isformed on the seed layer using, e.g., an electro-plating or electro-lessplating technique.

FIG. 4 illustrates a planarization of the metal layer 210 a. In anembodiment the planarization may be performed using a chemicalmechanical polishing (CMP) process or an etch back process to form metalfeatures or conductive features 210 b whose top is substantiallyco-planar with a top surface of the dielectric layer 204. When formed,the conductive features 210 b may be spaced apart from each other by afirst length L₁. In an embodiment the first length L₁ may be betweenabout 5 nm and about 100 nm, such as about 30 nm. However, any suitabledistance may alternatively be utilized.

In FIG. 5, a first etch stop layer 212 is deposited over the dielectriclayer 204, the conductive features 210 b, and in some embodiments overthe diffusion barrier layer 208. The first etch stop layer 212 isutilized to control the end point during subsequent etching processes.The first etch stop layer 212 may be made of one or more suitabledielectric materials. In some embodiments, the first etch stop layer 212is formed of silicon oxide, silicon nitride, oxygen-doped siliconcarbide, silicon carbide, silicon oxynitride, aluminum oxide, aluminumnitride, SiCN, SiO₂, the like, or combinations of these. It isunderstood that the first etch stop layer 212 can be formed of anymaterial capable of functioning as a stop layer. In some embodiments,the first etch stop layer has a thickness from about 10 Angstroms toabout 3,000 Angstroms. The first etch stop layer 212 is formed throughany of a variety of deposition techniques, including chemical vapordeposition (CVD), LPCVD (low-pressure chemical vapor deposition), APCVD(atmospheric-pressure chemical vapor deposition), PECVD (plasma-enhancedchemical vapor deposition), physical vapor deposition (PVD),plasma-enhanced atomic layer deposition (PE-ALD), sputtering, or anyother suitable deposition procedures. In one embodiment, the first etchstop layer 212 is deposited over the semiconductor device 200 at aprocess temperature of around 600 degrees Celsius, at a pressure of fromabout 0 to about 100 Torr, for from about 1 second to about 60 minutes.One of skill in the art understands that any suitable process may beutilized to form first etch stop layer 212.

In some embodiments, the first etch stop layer 212 has a first thicknessT₁ of less than about 1,000 Angstroms. In other embodiments, the firstthickness T₁ is between about 5 Angstroms and about 300 Angstroms. Insome embodiments, an etch stop layer having a thickness from about 5Angstroms to about 300 Angstroms allows a stepped structure inconjunction with a second etch stop layer to be formed in a manner thatforms an air gap at a position between any two of the conductivefeatures 210 b (not illustrated in FIG. 5 but illustrated and describedfurther below with respect to FIG. 10C).

FIG. 6 illustrates an intermediate step in a formation of a mask 214over the first etch stop layer 212. In an embodiment, the mask 214 is atri-layer photoresist layer having a bottom layer 216, a middle layer218, and a top layer 220. While a single patterned photoresist layercould be employed as the mask 214, a tri-layer mask allows for theformation of finer features having smaller dimensions and pitch. In theembodiment illustrated in FIG. 6, the bottom layer 216 may be a carbonorganic layer, similar to a photoresist layer. The middle layer 218 is asilicon containing carbon film in some embodiments, employed to helppattern the bottom layer 216. The top layer 220 having opening 222 a isa photoresist material, such as for instance, a photoresist materialdesigned for exposure to 193 nm wavelengths, and preferably designed forimmersion lithography, for instance.

The top layer 220 may be formed by known procedures such as, for examplecoating, exposure, post exposure baking, and developing. In oneembodiment, the resist coating may utilize spin-on coating. In oneexample of the exposure, the coated resist layer is selectively exposedby radiation beam through a mask having a predefined pattern. Theradiation beam includes ultraviolet (UV) light in one example. Theexposing process may be further extended to include other technologiessuch as a maskless exposing or writing process. After the exposingprocess, the photoresist layer is further processed by a thermal bakingprocess, referred to as a post exposure bake (PEB). The PEB may induce acascade of chemical transformations in the exposed portion of the resistlayer, which is transformed to have an increased solubility of theresist in a developer. Thereafter, the resist layer on the substrate isdeveloped such that the exposed resist portion is dissolved and washedaway during the developing process. The lithography processes describedabove may only present a subset of processing steps associated with alithography patterning technique. The lithography process may furtherinclude other steps such as cleaning and baking in a proper sequence.For example, the developed resist layer may be further baked, referredto as hard baking. One skilled in the art will recognize that a positivephotoresist process or a negative photoresist process could be equallyapplied.

The first openings 222 a (only one of which is illustrated in FIG. 6),is positioned such that a portion of the dielectric layer 204 betweentwo of the conductive features 210 b will be exposed for a subsequentetching process (described below with respect to FIG. 7). As such, inorder to ensure that the subsequent etching process removes thedielectric layer 204 from between adjacent conductive features 210 b,the first openings 222 a is formed to have a second length L₂ that islarger than the first length L₁ (the length between adjacent ones of theconductive features 210 b).

Additionally, to further ensure that the overlay problems are addressed,the second length L₂ may be large enough to not only ensure that thesubsequent etching process removes the dielectric layer 204 from betweenthe conductive features 210 b, but will also remove the first etch stoplayer 212 from a portion of the conductive features 210 b and therebyexpose a corner region of the conductive features 210 b (as discussedfurther below with respect to FIG. 7). In such an embodiment the secondlength L₂ may be larger than the first length by between about 0.1 nmand about 40 nm, such as about 20 nm, for a total second length L₂ ofbetween about 5 nm and about 150 nm, such as about 50 nm.

By forming the second length L₂ to be larger than the first length L₁,and then subsequently dealing with the exposed corners of the conductivefeatures 210 b (as described further below with respect to FIG. 7),previous concerns regarding overlay issues may be avoided. Inparticular, by forming the second length L₂ to be larger than the firstlength L₁, the corner region of the conductive features 210 b areintentionally exposed and subsequently protected (as described furtherbelow with respect to FIG. 8). As such, problems caused by unintentionaland undesired exposure of the corner regions may be avoided.

FIG. 7 illustrates a subsequent use of the openings 222 a as a mask inorder to etch through the first etch stop layer 212. In an embodimentthe etch through the first etch stop layer 212 is performed to extendthe first openings 222 a through the first etch stop layer 212 to form asecond opening 222 b within the first etch stop layer 212 with thesecond length L₂. As such, the etch through the first etch stop layer212 may be performed using an anisotropic etching process, such as areactive ion etch, although any suitable etching process mayalternatively be utilized.

Once the etch process has etched through the first etch stop layer 212,the second length L₂ of the first openings 222 a causes the dielectriclayer 204 between the conductive features 210 b along with cornerregions (represented in FIG. 7 by the dashed circled labeled 224) of theconductive features 210 b (and portions of the diffusion barrier layer208) to be exposed. At this point, the etching process continues byremoving the exposed dielectric layer 204 between the conductivefeatures 210 b without significantly removing the material of theconductive features 210 b (although material of the diffusion barrierlayer 208 may be removed). In an embodiment the etching process mayutilize one or more wet or dry etching processes with reactants that areselective to the material of the dielectric layer 204. However, anysuitable etching process or combination of etching processes mayalternatively be utilized.

In an embodiment the second opening 222 b may be formed to have a firstdepth D₁ that, after a deposition of a second etch stop layer 226 (notillustrated in FIG. 7 but illustrated and described below with respectto FIG. 8), and when combined with a third length L₃ (also notillustrated in FIG. 7 but illustrated and described below with respectto FIG. 8), will provide a suitable profile for forming an air gap 242(also not illustrated in FIG. 7 but illustrated and described furtherbelow with respect to FIG. 10C) utilizing a deposition process such aschemical vapor deposition. For example, in an embodiment the secondopening 222 b may have the first depth D₁ of between about 10 nm andabout 300 nm, such as about 40 nm.

In a particular embodiment, the etch process utilizes a medium-densityplasma etch system using capacitively coupled plasmas, or a high-densityplasma etch system that utilizes either inductive, helicon, or electroncyclotron resonance (ECR) plasmas, wherein the exposed dielectricmaterial is anisotropically removed by fluorocarbon plasma, formingsecond opening 222 b. Other dry-etch process may alternatively be used.The mechanism of etching in each dry-etch processes may have a physicalbasis (e.g., glow-discharge sputtering, or ion milling) or a chemicalbasis (e.g., in pure plasma etching) or a combination of the two (e.g.,reactive ion etching or RIE). Thereafter, the mask 214 may be removed bya process such as wet stripping or O₂ plasma ashing.

FIG. 8 illustrates a formation of a second etch stop layer 226 over thefirst etch stop layer 212, the dielectric layer 204, the conductivefeatures 210 b, and in some embodiments over the diffusion barrier layer208. In some embodiments, the second etch stop layer 226 prevents metalor copper diffusion from portions of the conductive features 210 b thathave been exposed during the etching of the dielectric layer 204 (e.g.,the corner portion 224) and also works to help recover damage in theconductive feature 210 b that may have occurred during the etchingprocesses. In other embodiments, the second etch stop layer 226functions to control the end point during subsequent etching processes.

By using the second etch stop layer 226 to cover and seal the conductivematerial of the conductive features 210 b that were previously exposedduring the formation of the second opening 222 b, overlay issues thathave previously caused conductive material to diffuse and create defectscan be addressed directly and defects can be prevented. In particular,while previous attempts removed only those portions of the dielectriclayer 204 between the conductive features 210 b, overlay issues causedby the various processing steps could have unintentionally caused thematerial within the conductive features 210 b to have become exposed.Further, because it was unintentional, no corrective steps were utilizedto prevent further degradation. However, by affirmatively addressingthese issues, such degradation can be prevented, and fewer defectiveparts may be manufactured, leading to an increase in overall yield.

In some embodiments, the second etch stop layer 226 is one or moresuitable dielectric materials. In some embodiments, the second etch stoplayer 226 is formed of silicon oxide, silicon nitride, oxygen-dopedsilicon carbide, silicon carbide, silicon oxynitride, aluminum oxide,aluminum nitride, SiCN, SiO₂, the like, or combinations of these. It isunderstood that the second etch stop layer 226 can be formed of anymaterial capable of functioning as a stop layer. Additionally, in someembodiments, the material of the second etch stop layer 226 is the sameas the first etch stop layer 212, although in other embodiments, thematerial of the second etch stop layer 226 is different from the firstetch stop layer 212.

The second etch stop layer 226 may be formed through any of a variety ofdeposition techniques, including chemical vapor deposition (CVD), LPCVD(low-pressure chemical vapor deposition), APCVD (atmospheric-pressurechemical vapor deposition), PECVD (plasma-enhanced chemical vapordeposition), physical vapor deposition (PVD), plasma-enhanced atomiclayer deposition (PE-ALD), sputtering, and/or future-developeddeposition procedures. In one embodiment, the second etch stop layer 226is deposited conformally over the semiconductor device 200 using aconformal deposition process such as CVD. In this embodiment, thedeposition process may be performed at a process temperature of around600 degrees Celsius, at a pressure of from about 0 to about 100 Torr,for from about 1 second to about 60 minutes. One of skill in the artunderstands that any suitable process may be utilized to form the secondetch stop layer 226.

In some embodiments, the second etch stop layer 226 has a secondthickness T₂ of less than about 1,000 Angstroms, such as from about 5Angstroms to about 300 Angstroms. By forming the second etch stop layer226 to have the second thickness T₂, a stepped structure (illustrated inFIG. 8 by the dashed circle labeled 228), may be formed from the secondetch stop layer 226 as the second etch stop layer 226 covers the firstetch stop layer 212, the exposed conductive feature 210 b, and thenlines the sidewalls of the second openings 222 b. Additionally, bylining the second openings 222 b, the formation of the second etch stoplayer 226 will reduce the width of the second openings 222 b by doublethe thickness of the second etch stop layer 226 (one on each side of thesecond openings 222 b) as well as reduce the depth of the secondopenings 222 b. As such, the second opening 222 b may now have a thirdlength L₃ of between about 5 nm and about 100 nm, such as about 30 nm,and the second opening 222 b may have a second depth D₂ of between about10 nm and about 1000 nm, such as about 30 nm.

In some embodiments, a ratio of the second depth D₁ to the third lengthL₃ will have a ratio between about 1 to 30, such as between about 2 to5. By forming the second openings 222 b to have such a ratio, asubsequent deposition of the second dielectric layer 240 (notillustrated in FIG. 8 but illustrated and described below with respectto FIGS. 10A-10C) will be formed to additionally form an air gap betweenadjacent ones of the conductive features 210 b. However, any suitableratio may alternatively be utilized.

Additionally, within the stepped structure 228, a step angle α may beformed between a surface of one step and an adjoining surface of the onestep. When a conformal deposition process, such as a CVD process, isutilized to form the second etch stop layer 226, the step angle α mayrange from about 90° to about 150°, in order to create the steppedstructure.

FIG. 9 illustrates a blown up view of a portion of the semiconductordevice 200 showing various dimensions of the parts of the semiconductordevice 200, such as the first etch stop layer 212, the second etch stoplayer 226, and the conductive features 210 b. As discussed above withrespect to FIG. 7, following the etching of dielectric layer 204, cornerportions 224 of each of the conductive features 210 b will be exposed.In some embodiments in which the conductive features 210 b has a firstwidth W₁ or critical dimension, the exposed corner portion 224 may havea second width W₂ that is determined according to the following formula:W ₂=10%−80% (W ₁)As an example, in an embodiment in which the first width W₁ is betweenabout 10 nm and about 100 nm, the second width W₂ is between about 1 nmand about 80 nm.

Also, the combined structure of the first etch stop layer 212 and thesecond etch stop layer 226 may have a first height H₁ that is acombination of the first thickness T₁ (of the first etch stop layer 212)and the second thickness T₂ (of the second etch stop layer 226). Forexample, the combined structure of the first etch stop layer 212 and thesecond etch stop layer 226 may have the first height H₁ as given by thefollowing formula:H ₁ =T ₁ +T ₂where the first thickness T₁ is the thickness of first etch stop layer212, the second thickness T₂ is the thickness of second etch stop layer226, and the first height H₁ is the combined thickness of the first etchstop layer 212 and the second etch stop layer 226.

Additionally, within the stepped structure 228 itself, the second etchstop layer 226 may have a second height H₂ determined by the followingformula:H ₂=10%−90% (H ₁)

FIGS. 10A-10C illustrate a formation of a second dielectric layer 240over and within the second opening 222 b. In an embodiment the seconddielectric layer 240 is a dielectric material, such as silicon oxide,silicon nitride, a dielectric material having a dielectric constant (k)lower than thermal silicon oxide (thereafter referred to as low-kdielectric material layer), or other suitable dielectric material layer.In various examples, the low k dielectric material may includefluorinated silica glass (FSG), carbon doped silicon oxide, Xerogel,Aerogel, amorphous fluorinated carbon, Parylene, BCB(bis-benzocyclobutenes), polyimide, and/or other materials as examples.In another example, the low k dielectric material may include an extremelow k dielectric material (XLK).

In one particular embodiment, the second dielectric layer 240 is formedusing a chemical vapor deposition process, wherein the depositionprocess is tuned such that the dimensions of the second opening 226 band the deposition rate are such that the chemical vapor depositionprocess will not completely fill the second opening 226 b but, rather,will form the desired air gap 242 between adjacent conductive features210 b. For example, when the second opening 226 b has the third lengthL₃ and the second depth D₂ as described above with respect to FIG. 8),and in which silicon oxide is deposited, the chemical vapor depositionprocess may be begun by introducing precursor materials such as silane(SiH₄) and oxygen (O₂) to the second etch stop layer 226. In anembodiment the silane is introduced at a flow rate of between about 100sccm and about 10000 sccm, such as about 2000 sccm, while the oxygen isintroduced at a flow rate of between about 500 sccm and about 10000sccm, such as about 4000 sccm. Further, the deposition may be performedat a temperature of between about 200° C. and about 500° C., such asabout 400° C., and a pressure of between about 0.1 T and about 10 T,such as about 3 T.

By utilizing these process parameters the second dielectric layer 240will be deposited with a relatively high rate of deposition, such as arate of deposition of between about 1 nm/s and about 10 nm/s, such asabout 3 nm/s. With such a rate of deposition, and with the dimensions ofthe second opening 226 b as described above, the air gap 242 will beformed between the conductive features 210 b, thereby further isolatingthe conductive features 210 b from each other.

FIG. 10A illustrates an initial part of an embodiment of the depositionprocess. As illustrated, the deposition process for the seconddielectric layer 240 will begin by initially forming a layer of thesecond dielectric layer 240. This layer will begin to cover thesidewalls of the second opening 222 b as well as covering the surfacesof the second etch stop layer 226 that are located outside of the secondopening 222 b.

FIG. 10B illustrates a continuation of the deposition process under thesame parameters. In this process, the material of the second dielectriclayer 240 continues to grow during the CVD process. However, because ofthe deposition rate of the second dielectric layer 240, the material ofthe second dielectric layer 240 will grow faster at the edges of thesecond openings 226 b than deeper within the second openings 226 b. Assuch, the shape of the second opening 226 b changes into an invertedfunnel shaped opening with a larger width closer to the substrate 202than further from the substrate 202.

FIG. 10C illustrates a continuation of the deposition process under thesame parameters. As the process continues, those portions of the seconddielectric layer 240 that were growing together in FIG. 10B (thematerial at the edges of the second openings 226 b) will come togetherand seal off the inverted funnel shaped opening. By sealing off thisopening, further deposition into the second opening 226 b is preventedand the air gap 242 is formed and sealed from further structures thatmay be formed in subsequent processes.

Additionally, even after the air gap 242 has been formed and sealed, thedeposition process may be continued in order to provide an overlyinglayer that will assist in protecting the air gap 242 from being reopenedduring further processing. In a particular embodiment the depositionprocess is continued until the second dielectric material 240 has athird thickness T₃ over the second etch stop layer 226 of between about10 Å and about 2000 Å, such as about 1500 Å. By continuing thedeposition process, the air gap 242 may be further protected fromadditional processing, thereby helping to assure that the air gap 242remains void of undesired materials that may otherwise cause defects,such as conductive materials that may cause a short.

FIG. 11 illustrates a planarization process that may be utilized toremove excess second dielectric layer 240 and provide a suitable planarsurface for additional processing. In an embodiment the planarizationprocess may be performed using, for example, a chemical mechanicalpolishing process, in which etchants and abrasives are introduced to asurface of the second dielectric layer 240 and a platen (not separatelyillustrated in FIG. 11) is utilized to grind the second dielectric layer240 until a desired thickness is achieved. In an embodiment theplanarization process may be utilized to remove the second dielectriclayer 240 until the dielectric layer 240 has a fourth thickness T₄ overthe second etch stop layer 226 of between about 10 Å and about 2000 Å,such as about 1500 Å.

FIG. 11 also illustrates a formation of a second metal layer (M_(x+1))over the conductive features 210 b and the second dielectric layer 240along with a via (V_(x)) to electrically interconnect the second metallayer to the conductive features 210 b. In a particular embodiment athird dielectric layer 1101 is formed over the second dielectric layer240. Once formed, the third dielectric layer 1101 may be patterned toform a via opening and trench openings using, e.g., one or morephotolithographic masking and etching processes. Once the via openingand the trench openings have been formed, the via openings and thetrench openings may be lined with a second barrier layer 1103, andconductive material 1105 may be plated or otherwise placed within thevia opening and the trench openings. Once formed, the excess portions ofthe conductive material 1105 and the second barrier layer 1103 outsideof the via openings and the trench opening may be removed using, e.g., aplanarization process such as a chemical mechanical polish process.

It will be appreciated that the embodiments of the present disclosuremay be iteratively performed to form multiple metallization layers onestacked upon another in a back-end-of-the-line stack. It is alsounderstood that the dimensions recited are merely examples, and willchange with the scaling down of integrated circuits. It is furtherunderstood that semiconductor device 200 shown in FIGS. 2-11 are onlyfor illustrative purpose and are not limiting. Additional steps may beperformed such as forming multiple metallization layers. Also, it shouldbe understood that the ordering of the various steps discussed abovewith reference to FIGS. 2-11 are provided for illustrative purposes, andas such, other embodiments may utilize different sequences. Thesevarious ordering of steps are to be included within the scope ofembodiments. Additional embodiments can also be conceived.

FIG. 12 illustrates another embodiment of the formation of the secondetch stop layer 226. In this embodiment, rather than utilizing aconformal deposition process such as CVD, a non-conformal depositionprocess is utilized in order to intentionally form overhangs 230 at thecorners of the second openings 226 b in order to assist with theformation and sealing of the air gap 242. In a particular embodiment thenon-conformal deposition process may be a plasma vapor deposition (PVD)process, such as sputtering, whereby ions are directed to dislodgematerial from a target in order to direct the desired material towardsthe surface of the first etch stop layer 212 and the second opening 222b and form the second etch stop layer 226. By using a non-conformaldeposition process, deposited material may accumulate at the corners ofthe second openings 226 b, thereby causing the second etch stop layer226 to form more rapidly at the corners than within the second openings226 b and causing the overhangs 230 to form.

In a particular embodiment in which a plasma vapor deposition isutilized, the second etch stop layer 226 may be formed using a target ofsilicon oxide and ions such as argon. Within the process, a DC power maybe set to between about 0.5 KW and about 30 KW, such as about 5 KW, andan AC bias may be set to be less than about 2.5 KW, such as about 100 W.The deposition process may be performed at a temperature of betweenabout room temperature and about 400° C., such as about 200° C. and apressure of about 1 mT and about 100 mT, such as about 5 mT. However,any suitable processing parameters may alternatively be utilized.

In this embodiment in which the second etch stop layer 226 is formed ina non-conformal manner, the step angle α is generally less than 90°because of the overhang 230. As such, in this embodiment the step anglemay range from 30° to 90°. Additionally, in order to enhance theformation of the air gap 242 (not illustrated in FIG. 12 but illustratedand described below with respect to FIG. 13) in this embodiment, thematerial of the overhangs 230 (one on each side of the second openings226 b) are continued to be deposited until the overhangs 230 are spacedapart from each other a fourth length L₄ of less than about 100 nm, suchas less than about 20 nm. However, any suitable distance mayalternatively be used to enhance the formation of the air gap 242.

FIG. 13 illustrates a formation of the second dielectric layer 240 overthe overhangs 230. In an embodiment the formation of the seconddielectric layer 240 is performed as described above with respect toFIGS. 10A-10C. For example, in an embodiment the second dielectric layer240 is formed using a chemical vapor deposition process that closes thesecond openings 226 b and forms the third thickness T₃ over the secondetch stop layer 226. However, with the presence of the overhangs 230already in place, the deposition of the material of the seconddielectric layer 240 more easily seals off the second opening 226 bwithout a substantial deposition of material within the second opening226 b to form the desired air gap 242. As such, the air gap 242 may belarger and better isolate the conductive features 210 b.

Additionally, once the second opening 226 b has been sealed off, thedeposition of the second dielectric layer 240 may be continued until thesecond dielectric layer 240 has reached the third thickness T₃. Once thethird thickness T₃ has been reached, the second dielectric layer 240 maybe planarized to the fourth thickness T₄ (not individually illustratedin FIG. 13 but illustrated and described above with respect to FIG. 11),and additional processing may be performed as described above withrespect to FIG. 11. For example, the second metallization layer(M_(x+1)) may be formed over the second openings 226 b, and connected tothe conductive feature 210 b utilizing a via (V_(x)). However, any othersuitable processing may alternatively be performed.

By utilizing a non-conformal deposition process during the manufacturingof the second etch stop layer 226, the overhangs 230 may be formed andwill assist in forming and sealing off the air gap 242 during thedeposition of the second dielectric layer 240. Such processingflexibility assists in the overall integration of the formation of theair gap 242 with other processes. Such integration allows for an overallmore efficient process.

FIGS. 14 through 21 illustrate cross-sectional views of intermediatestages in the formation of a second semiconductor device 1400 having aninterconnect structure in accordance with another alternative embodimentof the present disclosure. In this embodiment the second semiconductordevice 1400 may be formed by initially utilizing the substrate 202, thedielectric layer 204, diffusion barrier layer 208, and the conductivefeatures 210 b as described above with respect to FIGS. 1-4.Additionally, however, prior to formation of the first etch stop layer212, capping layers 250 are formed over the conductive features 210 b.The capping layers 250 are utilized to improve the electromigrationcharacteristics of the conductive features 210 b.

In an embodiment the capping layers 250 comprise a conductive materialsuch as a metal-containing layer. In particular embodiments the cappinglayers 250 comprise cobalt, copper, tungsten, aluminum, manganese,ruthenium, tantalum, combinations of these, alloys thereof, or the like.However, any suitable material that can improve the electromigration ofthe conductive features 210 b may alternatively be utilized.

The capping layers 250 may be formed by a deposition process includingplasma vapor deposition (PVD), plasma-enhanced chemical vapor deposition(PECVD), low-pressure chemical vapor deposition (LPCVD), chemical vapordeposition (CVD), plasma-enhanced atomic layer deposition (PEALD),electroless plating, sputtering, the like, or a combination thereof. Insome embodiments the capping layers 250 are formed at a processtemperature from about room temperature to about 600 degrees Celsius andat a pressure from about 0 Torr to about 100 Torr. In some embodiments,the capping layers 250 are selectively formed on the conductive features210 b. In other embodiments, the capping layers 250 are formed entirelyover the second semiconductor device 1400 and then subjected to apatterning process to remove the portions of the capping layer 250 onthe dielectric layer 204, while leaving remaining portions of thecapping layer 250 on the conductive features 210 b and/or the diffusionbarrier layer 208.

In an embodiment the capping layers 250 may be formed to cover thematerial of the conductive features 210 b without covering the adjacentdiffusion barrier layer 208. However, in alternative embodiments, inorder to ensure that the conductive material of the conductive features210 b are sealed, the capping layers 250 may be formed over thediffusion barrier layer 208 (or any other barrier layers or adhesionlayers as well) as well as the conductive material of the conductivefeatures 210 b. Any combination of coverages may alternatively beutilized, and all such combinations are fully intended to be includedwithin the scope of the embodiments.

By forming the capping layers 250 over the conductive features 210 b,the capping layers will have a top surface that is further away from thesubstrate 202 than the top surface of the conductive features 210 b. Insome embodiments, the capping layers 250 have a fifth thickness T₅ ofless than about 500 Å, such as between about 5 Å to about 100 Å.

FIG. 15 illustrates the deposition of the first etch stop layer 212. Inthis embodiment, however, the first etch stop layer 212 is depositedover the capping layers 250 as well being deposited over the dielectriclayer 204, the conductive features 210 b, and the diffusion barrierlayer 208. In an embodiment the first etch stop layer 212 is formed asdescribed above with respect to FIG. 5. For example, the first etch stoplayer 212 may be a material such as silicon oxide formed using adeposition process such as CVD. However, any other suitable material andprocess may alternatively be utilized.

FIG. 16 illustrates the formation of the mask 214 over the first etchstop layer 212 and patterned to form the patterned photoresist layer ormask 214 having the first opening 222 a. In an embodiment the mask 214is formed as described above with respect to FIG. 6. For example, themask 214 may be a tri-layer photoresist layer having the bottom layer216, the middle layer 218, and the top layer 220. Additionally, the toplayer 220 is patterned to form the first opening 222 a having the secondlength L₂ that is greater than the first length L₁.

FIG. 17 illustrates the use of the mask 214 to extend the first opening222 a through the middle layer 218, the top layer 220, the first etchstop layer 212, and the capping layer 250 to form the second opening 222b. The etching process, by patterning the capping layer 250, will alsoexpose the corner portions 224 of the conductive features 210 b. Oncethe capping layer 250 and the first etch stop layer 212 have beenpatterned, portions of the dielectric layer 204 between the conductivefeatures 210 b may be removed to form the second opening 222 b.

In an embodiment the first etch stop layer 212, the capping layers 250,the diffusion barrier layer 208 in some embodiments, and the dielectriclayer 204 exposed by the first opening 222 a of the mask 214 are removedby one or more etch processes such as a dry etch, wet etch, orcombinations thereof. In one example, the etch process utilizes amedium-density plasma etch system using capacitively coupled plasmas, ora high-density plasma etch system that utilizes either inductive,helicon, or electron cyclotron resonance (ECR) plasmas, wherein theexposed dielectric material is anisotropically removed by fluorocarbonplasma, forming the second opening 222 b. Other dry-etch process mayalternatively be used. The mechanism of etching in each dry-etch processmay have a physical basis (e.g., glow-discharge sputtering, or ionmilling) or a chemical basis (e.g., in pure plasma etching) or acombination of the two (e.g., reactive ion etching or RIE). Thereafter,the mask 214 may be removed by a process such as wet stripping or O₂plasma ashing.

FIG. 18 illustrates the deposition of the second etch stop layer 226.However, in this embodiment the second etch stop layer 226 is depositedover the capping layer 250 as well as over the first etch stop layer212, the dielectric layer 204, the conductive features 210 b, and insome embodiments over the diffusion barrier layer 208. In someembodiments, the second etch stop layer 226 prevents metal or copperdiffusion from the portions of the conductive features 210 b that havebeen exposed during the etching of the dielectric layer 204. In anembodiment the second etch stop layer 226 is formed as described abovewith respect to FIG. 8. For example, the second etch stop layer 226 maybe formed using a conformal deposition process such as chemical vapordeposition in order to seal the material of the conductive features 210b and line the sidewalls of the second opening 222 b. In someembodiments, the second etch stop layer 226 has a thickness of less thanabout 1,000 Å, such as being between about 5 Å to about 300 Å.

Alternatively, the second etch stop layer 226 may be formed using anon-conformal deposition process as described above with respect to FIG.12. For example, the second etch stop layer 226 may be formed using aplasma vapor deposition process, which will also form the overhangs 230(not separately illustrated in FIG. 18) that will extend outwards overthe second openings 226 b and assist in the formation of the air gaps242.

FIG. 19 illustrates a blown up view of a portion of the semiconductordevice 200 showing various dimensions of the parts of the secondsemiconductor device 1400, such as the capping layer 250, the first etchstop layer 212, the second etch stop layer 226, and the conductivefeatures 210 b. In some embodiments the combined layers of the cappinglayer 250 (with the fifth thickness T₅), the first etch stop layer 212(with the first thickness T₁), and the second etch stop layer (with thesecond thickness T₂), may have a total third height H₃ that isdetermined by the following formula:H ₃ =T ₅ +T ₁ +T ₂

Additionally, within the stepped structure 228 itself, the materialwithin the stepped structure may have a fourth height H₄ that in someembodiments may be the second thickness T₂ of the second etch stop layer226. Additionally, in other embodiments the first etch stop layer 212may not be fully removed from the stepped structure and, as such, thefourth height H₄ of material within the stepped structure may comprisethe second thickness T₂ as well as the leftover material from the firstetch stop layer 212 (T₂+partial T₁). Also, in other embodiments thecapping layer 250 may not be fully removed during the etch process, andthe fourth height H₄ of material within the stepped structure maycomprise the second thickness T₂ (of the second etch stop layer 226) andall of or a portion of the capping layer 250 (T₂+partial T₅). Anysuitable combination of thicknesses of materials within the steppedstructure may alternatively be utilized.

FIG. 20 illustrates a deposition of the second dielectric layer 240 overthe second etch stop layer 226. In an embodiment the second dielectriclayer 240 is deposited as described above with respect to FIGS. 10A-10C.For example, the second dielectric layer 240 may be a dielectricmaterial such as silicon oxide deposited using a chemical vapordeposition process. Additionally, the deposition process may be tuned tohave a large enough rate of deposition that the deposition process willform the air gap 242 within the second opening 222 b, thereby helping toisolate adjacent ones of the conductive features 210 b from each other.

Additionally, the deposition of the second dielectric layer 240 willalso form the second dielectric layer 240 to a thickness over the secondetch stop layer 226 that is sufficient to protect the air gap 242 frombeing damaged or reopened during subsequent processing. For example, thedeposition of the second dielectric layer 240 may be continued until thesecond dielectric layer 240 has the third thickness T₃ over the secondetch stop layer 226 and then planarized using, e.g., a chemicalmechanical polishing process to reduce the second dielectric layer 240to the fourth thickness T₄.

FIG. 21 illustrates a formation of the second metallization layer(M_(x+1)) over the second dielectric layer 240 and in electrical contactwith one of the conductive features 210 b. In an embodiment the secondmetallization layer (M_(x+i)) may be formed as described above withrespect to FIG. 11. For example, the third dielectric layer 1101 may bedeposited and then the second metallization layer (M_(x+1)) and theconnecting via (V_(x)) may be formed within the third dielectric layer1101 using, e.g., a damascene or dual damascene process.

It will be appreciated that the embodiments of the present disclosuremay be iteratively performed to form multiple metallization layers onestacked upon another in a back-end-of-the-line stack. It is alsounderstood that the dimensions recited are merely examples, and willchange with the scaling down of integrated circuits. It is furtherunderstood that second semiconductor device 1400 shown in FIGS. 14-21are only for illustrative purpose and are not limiting. Additional stepsmay be performed such as forming multiple metallization layers andfurther processes may be used to complete the fabrication and packagingof the semiconductor device. Also, it should be understood that theordering of the various steps discussed above with reference to FIGS.14-21 are provided for illustrative purposes, and as such, otherembodiments may utilize different sequences. These various ordering ofsteps are to be included within the scope of embodiments. Additionalembodiments can also be conceived.

Advantages of one or more embodiments of the present disclosure mayinclude one or more of the following.

In one or more embodiments, since air gaps have a k value equal to 1,the equivalent k value of the dielectric material in the interconnectstructures is lowered, resulting in a reduction in the parasiticcapacitance between metal lines. This results in increased speed andbetter overall performance of the IC device.

In one or more embodiments, the formation of the air gaps is uniform andcontrollable, and does not suffer from the permeable (porous) hard maskcollapsing problem that may occur in conventional methods for formingair gaps.

In one or more embodiments, the processes disclosed herein arecompatible with existing semiconductor fabrication flow. Therefore, theembodiments of the present disclosure will not be expensive toimplement.

Various aspects of the present disclosure have been described. Accordingto one aspect of this description, a method for fabricating asemiconductor device comprising forming a plurality of conductivefeatures within a first dielectric layer over a substrate and forming afirst etch stop layer over the plurality of conductive features isprovided. A first opening is formed through the first etch stop layer toat least partially expose a first top surface of a first one of theplurality of conductive features and to expose a second top surface of asecond one of the plurality of conductive features. A portion of thefirst dielectric layer is removed between the first one of theconductive features and the second one of the conductive features toform a second opening. The second opening is lined with a second etchstop layer, wherein the second etch stop layer extends over the firstetch stop layer. A dielectric material is deposited into the secondopening, wherein the depositing the dielectric material furthercomprises forming an air gap within the second opening.

According to another aspect of this description, a method for forming aninterconnect structure comprising forming a first conductive line and asecond conductive line within a dielectric layer over a substrate andforming a first etch stop layer over the first conductive line and thesecond conductive line is provided. A portion of the first etch stoplayer to is removed to expose a first corner of the first conductiveline and a second corner of the second conductive line. A portion of thedielectric layer is removed between the first conductive line and thesecond conductive line to form a first opening. A second etch stop layeris deposited over the first etch stop layer and within the firstopening, and a dielectric material is deposited within the firstopening, wherein the depositing the dielectric material seals a void atleast partially within the first opening.

According to yet another aspect of this description, a semiconductordevice having an interconnect structure comprising a metal interconnectlayer having a first conductive feature and a second conductive featurewithin a dielectric layer overlying a substrate is provided. An etchstop layer having a stepped profile is located over a first corner ofthe first conductive feature. A dielectric material is located adjacentto the etch stop layer between the first conductive feature and thesecond conductive feature. An air gap is located within the dielectricmaterial between the first conductive feature and the second conductivefeature.

In the preceding detailed description, various embodiments have beendescribed. It will, however, be apparent to a person of ordinary skillin the art that various modifications, structures, processes, andchanges may be made thereto without departing from the broader spiritand scope of the present disclosure. The specification and drawings are,accordingly, to be regarded as illustrative and not restrictive. It isunderstood that embodiments of the present disclosure are capable ofusing various other combinations and environments and are capable ofchanges or modifications within the scope of the claims and their rangeof equivalents.

What is claimed is:
 1. A method of manufacturing a semiconductor device,the method comprising: embedding a conductive material into a dielectriclayer to form a first conductive feature and a second conductivefeature, the first conductive feature having a first width; sealing thefirst conductive feature with a first etch stop layer; removing a firstportion of the first etch stop layer to form an exposed portion of thefirst conductive feature, the exposed portion having a second width lessthan the first width, wherein the removing the first portion alsoremoves a portion of the dielectric layer to form a first opening;re-sealing the first conductive feature with a second etch stop layerafter the removing the first portion of the first etch stop layer, thesecond etch stop layer extending into the first opening; and depositinga dielectric material to seal a void within the first opening.
 2. Themethod of claim 1, wherein the first width is between about 10 nm andabout 100 nm.
 3. The method of claim 1, wherein the second width isbetween about 1 nm and about 80 nm.
 4. The method of claim 1, whereinthe first conductive feature is separated from the second conductivefeature by a first distance of between about 5 nm and about 100 nm. 5.The method of claim 4, wherein the first portion of the first etch stoplayer has a first length that is greater than the first distance.
 6. Themethod of claim 5, wherein the first length is between about 5 nm andabout 150 nm.
 7. The method of claim 1, wherein the first opening has afirst depth of between about 10 nm and about 300 nm.
 8. A method ofmanufacturing a semiconductor device, the method comprising: depositinga barrier layer into an opening within a dielectric layer over asubstrate, the barrier layer comprising a sidewall facing away from aninterior of the opening; filling a remainder of the opening with aconductive material, the conductive material having a first width;depositing a first etch stop layer over the conductive material;removing a first portion of the first etch stop layer and a secondportion of the dielectric layer to expose both the sidewall of thebarrier layer and a surface of the conductive material, wherein thesurface of the conductive material has a second width less than thefirst width; depositing a second etch stop layer to cover the surface ofthe conductive material and the sidewall of the barrier layer; anddepositing a dielectric material over the second etch stop layer,wherein the depositing the dielectric material forms a void and whereina first line extends through the void, the dielectric material, thesidewall, and the conductive material, the first line being parallelwith a major surface of the substrate.
 9. The method of claim 8, whereinthe depositing the second etch stop layer is performed at least in partwith a conformal deposition process.
 10. The method of claim 8, whereinthe depositing the second etch stop layer is performed at least in partwith a non-conformal deposition process.
 11. The method of claim 10,wherein the non-conformal deposition process forms a first overhang. 12.The method of claim 11, wherein the first overhang is spaced apart froma second overhang by a distance of less than about 20 nm.
 13. The methodof claim 8, wherein after the depositing the second etch stop layer thesecond etch stop layer has a step angle of between about 90° and about150°.
 14. The method of claim 8, wherein after the depositing the secondetch stop layer the second etch stop layer has a step angle of less thanabout 90°.
 15. A method of manufacturing a semiconductor device, themethod comprising: depositing an etch stop layer over and in physicalcontact with a first conductive element and in physical contact with asidewall of a barrier layer adjacent to the first conductive element,wherein after the depositing the etch stop layer a surface of the etchstop layer facing away from the first conductive element has a stepangle between about 90° and about 150°; and depositing a dielectricmaterial adjacent to the etch stop layer, wherein the depositing thedielectric material seals an open region located directly between thefirst conductive element and an adjacent second conductive element. 16.The method of claim 15, wherein the depositing the dielectric materialdeposits the dielectric material at a deposition rate of between about 1nm/s and about 10 nm/s.
 17. The method of claim 15, wherein thedepositing the dielectric material is performed by introducing silaneand oxygen to the etch stop layer.
 18. The method of claim 17, whereinthe silane is introduced at a flow rate of between about 100 sccm andabout 2000 sccm.
 19. The method of claim 18, wherein the oxygen isintroduced at a flow rate of between about 500 sccm and about 4000 sccm.20. The method of claim 19, wherein the depositing the dielectricmaterial is performed at a temperature of between about 200° C. andabout 500° C. and at a pressure of between about 0.1 T and about 3 T.